Overcoming the challenges of processing silicon carbide single crystals

Silicon carbide (SiC) has emerged as a crucial material in the realm of high-end electronics, particularly for applications requiring high thermal conductivity, high hardness, and robust chemical stability. Its application extends to power electronics, high-temperature semiconductors, and cutting-edge devices.

However, the processing of SiC substrates presents significant challenges, including the need for precision grinding methods that minimize surface roughness and subsurface damage while managing high processing costs. These challenges have spurred ongoing research to refine grinding techniques and understand the atomic-level damage mechanisms involved in processing SiC.

Despite numerous studies on SiC processing, a comprehensive understanding of the latest advancements and their implications for improving manufacturing efficiency remains fragmented. Recent efforts have focused on addressing these gaps by investigating new processing methods and materials to better control the surface and subsurface characteristics of SiC wafers.

Recently, a team of mechanical scientists led by Shang Gao from Dalian University of Technology, China published a review paper providing a thorough overview of the state-of-the-art in SiC processing. They systematically reviewed the current processing flows for SiC wafers, material removal mechanisms, and processing technologies, and provided guidance on future directions for SiC wafer processing.

The team published their work in the Journal of Advanced Manufacturing Science and Technology.

“This review provides a thorough analysis of the state-of-the-art methods for SiC processing and identifies key areas where further research is necessary,” said Shang Gao, the corresponding author. “By consolidating current knowledge and outlining future research directions, this work aims to guide the development of more efficient and effective processing techniques for SiC wafers.”

The article covers various aspects of SiC processing, including different grinding, lapping, and polishing techniques employed in the field. It delves into the mechanisms underlying material removal and highlights the latest technological advancements. The paper also addresses the challenges faced in achieving high-quality SiC wafers and proposes several innovative approaches to overcome these obstacles.

Through a comprehensive analysis, the review identifies critical areas requiring further investigation, providing a roadmap for future research efforts.

“This comprehensive review serves as a valuable resource for researchers and practitioners in the field, offering a detailed understanding of the current state of SiC processing and highlighting the critical areas that need further investigation,” Shang Gao added. “Our work aims to push the boundaries of what is currently known and stimulate further advancements in the field.”

Provided by
Tsinghua University Press